Three-dimensional Finite Elements Method simulation of Total Ionizing Dose in 22 nm bulk nFinFETs
نویسندگان
چکیده
Finite Elements Method simulation of Total Ionizing Dose effects on 22 nm bulk Fin Field Effect Transistor (FinFET) devices using the commercial software Synopsys Sentaurus TCAD are presented. The simulation parameters are extracted by calibrating the charge trapping model to experimental results on 400 nm SiO2 capacitors irradiated under zero bias. The FinFET device characteristics are calibrated to the commercial 22 nm bulk technology. Irradiation simulations of the transistor performed with all terminals grounded reveal increased hardness up to a total dose of 1 MRad(SiO2).
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